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MBR1035-MBR1060
MBR1035 - MBR1060
Features * * * * * *
Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
.113(2.87) .103(2.62) .594(15.1) .587(14.91)
.27(6.86) .23(5.84)
.412(10.5) MAX
DIA .154(3.91) .148(3.74)
.185(4.70) .175(4.44) .055(1.40) .045(1.14)
1
.16(4.06) .14(3.56)
2
Dimensions are in: inches (mm)
.56(14.22) .53(13.46)
.11(2.79) .10(2.54)
TO-220AC
.037(0.94) .027(0.68)
PIN 1 +
10 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(repetitive) if(surge) PD RJA RJL Tstg TJ Average Rectified Current Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 135C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature
TA = 25C unless otherwise noted
.205(5.20) .195(4.95) PIN 2 CASE Positive
+ CASE
.025(0.64) .014(0.35)
Parameter
Value
10 20 150 2.0 16.6 60 2.0 -65 to +175 -65 to +150
Units
A A A W mW/C C/W C/W C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
TA = 25C unless otherwise noted
Device
1035 1045 45 31 45 10,000 0.1 15 0.57 0.84 0.72 1.0 0.80 0.70 0.95 0.85 0.5 1050 50 35 50 1060 60 42 60 35 24 35
Units
V V V V/uS mA mA V V V V A
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Voltage Rate of Change (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 125C Maximum Forward Voltage IF = 10 A, TC = 25C IF = 10 A, TC = 125C IF = 20 A, TC = 25C IF = 20 A, TC = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz
(c)1999 Fairchild Semiconductor Corporation
MBR1035 - MBR1060, Rev. A
MBR1035-MBR1060
Schotty Barrier Rectifier
(continued)
Typical Characteristics
Forward Current Derating Curve
12 FORWARD CURRENT (A) 10
MBR1035-MBR1045
Non-Repetitive Surge Current
PEAK FORWARD SURGE CURRENT (A) 175 150 125 100 75 50 25 0.1
8
MBR1050-MBR1060
6 4 2 0
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS
0
25
50 75 100 125 150 AMBIENT TEMPERATURE ( C)
175
1 10 NUMBER OF CYCLES AT 60Hz
100
Forward Characteristics
50 10
REVERSE CURRENT (mA)
Reverse Characteristics
20 10
MBR1035-MBR1045 T A = 125 C
FORWARD CURRENT (A)
T A = 150 C
TA = 25 C
1
MBR1035-MBR1045
MBR1050-MBR1060 TA = 75 C
1
MBR1050-MBR1060
0.1
MBR1035-MBR1045
0.1
Pulse Width = 300S 2% Duty Cycle
0.01
TA = 25 C MBR1050-MBR1060
0.01
0
0.2
0.4 0.6 0.8 FORWARD VOLTAGE (V)
1
1.2
0.001
0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TRANSIENT THERMAL IMPEDANCE ( C/W)
Typical Junction Capacitance
5000 JUNCTION CAPACITANCE (pF)
Transient Thermal Impedance
100
2000 1000
MBR1035-MBR1045
10
500
MBR1050-MBR1060
1
200 100 0.1
1 10 REVERSE VOLTAGE (V)
100
0.1 0.01
0.1 1 10 T. PULSE DURATION (sec.)
100
MBR1035 - MBR1060, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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